发明名称 SEPARATIVE EXTENDED GATE FIELD EFFECT TRANSISTOR BASED URIC ACID SENSING DEVICE, SYSTEM AND METHOD FOR FORMING THEREOF
摘要 A separative extended gate field effect transistor based uric acid sensing device is provided, including: a substrate; a conductive layer including a silver paste layer on the substrate and a graphite-based paste layer on the silver paste layer; a conductive wire extended from the conductive layer; a titanium dioxide layer on the conductive layer; and a uric acid enzyme sensing film on the titanium dioxide layer.
申请公布号 US2009321792(A1) 申请公布日期 2009.12.31
申请号 US20090410665 申请日期 2009.03.25
申请人 NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY 发明人 CHOU JUNG-CHUAN;LIN CHIH-YU;CHEN WEI-CHUAN;CHEN CHENG-WEI
分类号 H01L29/772;H01L21/335 主分类号 H01L29/772
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