发明名称 Power Semiconductor Module
摘要 A power semiconductor module includes: a power semiconductor device; a first heat dissipation plate; a second heat dissipation plate; a first channel; a second channel; a first channel wall; a second channel wall; a first refrigerant outlet provided on the first channel wall in a position corresponding to the power semiconductor device; a second refrigerant outlet provided on the second channel wall in a position corresponding to the power semiconductor device; first pin fins provided on at least one of the first heat dissipation plate and the second heat dissipation plate so as to be arranged radially around at least one of the first refrigerant outlet and the second refrigerant outlet; and second pin fins arranged in a staggered manner or in a tessellated manner around the first pin fins that are arranged radially.
申请公布号 US2009321924(A1) 申请公布日期 2009.12.31
申请号 US20090493629 申请日期 2009.06.29
申请人 HITACHI, LTD. 发明人 FUNAKOSHI SUNAO;ISHIKAWA KATSUMI
分类号 H01L23/34 主分类号 H01L23/34
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