| 摘要 |
<p>Device (1) for treating substrates, comprising a chamber (4) having controlled pressure and temperature, a substrate holder (5) positioned in the chamber (4), the chamber (4) comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall (30) of the chamber equipped with a plurality of first channels (45) connected to a first inlet (11) and a plurality of second channels (37) connected to a second inlet (12), the first and second channels opening into the chamber (4) and being evenly distributed in the upper wall (30), a heating element (14) positioned above the upper wall (30) and a gas discharge ring (49) positioned between the upper wall (30) and the substrate holder (5), the upper wall (30) being electrically conducting and insulated relative to the substrate holder (5) so as to be able to apply a voltage between the upper wall (30) and the substrate holder (5).</p> |
