METHODS OP FABRICATING CRYSTALLINE ORGANIC SEMICONDUCTIVE LAYERS
摘要
<p>Disclosed herein are methods of preparing a semiconductor device including the steps of: depositing at least one organic crystal on a surface; depositing a semiconductor crystal growth solution in contact with the at least one organic crystal, wherein the semiconductor crystal growth solution includes at least one solvent and dissolved organic semiconductor compound; and forming an organic semiconductive layer upon evaporation of the at least one solvent from the semiconductor crystal growth solution.</p>
申请公布号
WO2009158201(A1)
申请公布日期
2009.12.30
申请号
WO2009US47006
申请日期
2009.06.11
申请人
3M INNOVATIVE PROPERTIES COMPANY;CLOUGH, ROBERT, S.;SCHNOBRICH, SCOTT, M.