发明名称 |
Etching glass/silica coatings - using carbon tetrafluoride plasma and photoresist mask |
摘要 |
<p>Coatings, pref. of glass or silica, are etched in a CF4 plasma environment. A photoresist material is applied to the coating and masked, then the structure is placed in a chamber which can be evacuated. After evacuating to 10-1 torr and residual O2 insufficient to attack the photoresist coating, CF4 is introduced into the chamber to 8 x 10-1 torr and a plasma is prod. by h.f. energy. The technique can be used in the prodn. of I.C.s, only a simple mask being needed.</p> |
申请公布号 |
DE2224468(A1) |
申请公布日期 |
1973.01.18 |
申请号 |
DE19722224468 |
申请日期 |
1972.05.19 |
申请人 |
MOTOROLA INC., FRANKLIN PARK, ILL. (V.ST.A.) |
发明人 |
CRABTREE, PHILLIP NORVAL, MOUNTAINVIEW, CALIF. (V.ST.A.) |
分类号 |
C03C15/00;H01L21/311;(IPC1-7):03C15/00 |
主分类号 |
C03C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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