| 摘要 |
<p>Disclosed is a semiconductor encapsulation material which is characterized by being composed of a glass for metal coating having a strain point of not less than 480°C, a temperature corresponding to the viscosity of 104 dPa·s of not more than 1100°C, and a thermal expansion coefficient for the range of 30-380°C of from 70 × 10-7/°C to 110 × 10-7/°C. The semiconductor encapsulation material does not contain an environmentally harmful substance, while having a high heat-resistant temperature of not less than 500°C. In addition, the semiconductor encapsulation material is capable of encapsulating an easily oxidizable metal such as dumet.</p> |
