| 摘要 |
<p>A method for forming a thin film photovoltaic device includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. Additionally, the method includes forming a copper indium material comprising an atomic ratio of Cu:In ranging from about 1.35:1 to about 1.60:1 by at least sputtering a target comprising an indium copper material. The method further includes subjecting the copper indium material to thermal treatment process in an environment containing a sulfur bearing species. Furthermore, the method includes forming a copper indium disulfide material from at least the thermal treatment process of the copper indium material and maintaining an interface region between the copper indium disulfide material and electrode substantially free from a metal disulfide layer, which has different semiconductor characteristics from the copper indium disulfide material. Moreover, the method includes forming a window layer overlying the copper indium disulfide material.</p> |
