发明名称 LOW-VOLTAGE, N-CHANNEL HYBRID TRANSISTORS
摘要 <p>Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.</p>
申请公布号 WO2009089283(A3) 申请公布日期 2009.12.30
申请号 WO2009US30332 申请日期 2009.01.07
申请人 THE JOHNS HOPKINS UNIVERSITY;KATZ, HOWARD, EDAN;PAL, BHOLA, NATH;SEE, KEVIN, CUA;JUNG, BYUNG, JUN 发明人 KATZ, HOWARD, EDAN;PAL, BHOLA, NATH;SEE, KEVIN, CUA;JUNG, BYUNG, JUN
分类号 H01L29/10 主分类号 H01L29/10
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