MAGNETICALLY DE-COUPLING MAGNETIC MEMORY CELLS AND BIT/WORD LINES FOR REDUCING BIT SELECTION ERRORS
摘要
Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.
申请公布号
WO2009117228(A3)
申请公布日期
2009.12.30
申请号
WO2009US35285
申请日期
2009.02.26
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;ASSEFA, SOLOMON;KANAKASABAPATHY, SIVANANDA, K.;NOWAK, JANUSZ, JOZEF;TROUILLOUD, PHILIP, L.
发明人
ASSEFA, SOLOMON;KANAKASABAPATHY, SIVANANDA, K.;NOWAK, JANUSZ, JOZEF;TROUILLOUD, PHILIP, L.