发明名称 HYBRID CONDUCTIVE VIAS INCLUDING SMALL DIMENSION ACTIVE SURFACE ENDS AND LARGER DIMENSION BACK SIDE ENDS, SEMICONDUCTOR DEVICES INCLUDING THE SAME, AND ASSOCIATED METHODS
摘要 A conductive via of a semiconductor device includes a relatively small diameter portion extending into an active surface of a fabrication substrate and a corresponding, relatively large diameter portion that extends into a back side of the fabrication substrate. This type of conductive via may be fabricated by forming the relatively small diameter portion before or during BEOL processing, while the large diameter portion of each conductive via may be fabricated after BEOL processing is complete. Electronic devices that include one or more semiconductor devices with such conductive vias are also disclosed. No Suitable Figure
申请公布号 SG157351(A1) 申请公布日期 2009.12.29
申请号 SG20090037821 申请日期 2009.06.03
申请人 MICRON TECHNOLOGY, INC. 发明人 COBBLEY, CHAD A.;GREENWOOD, JONATHON G.
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