发明名称 AMPLIFICATION TYPE SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC INFORMATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To obtain an image of high picture quality which is made smaller in pixel size and free of color mixing and crosstalk. SOLUTION: In a solid-state imaging element, the potential level of a depleted low-density P-well 4 which is completely depleted is deeper than a ground level, and has a mountain-shaped curved line such that minority carriers can move toward an embedded type photodiode 1 or an N-type substrate 3 at a valley part of the potential level of the embedded photodiode 1, so that a small number of carriers into which incident light is photoelectrically converted quickly move toward the embedded type photodiode 1 or N-type substrate 3 because of the mountain-shaped curved line of the potential level. Consequently, the minority carriers are prevented from leaking out to an adjacent pixel portion. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009302349(A) 申请公布日期 2009.12.24
申请号 JP20080156028 申请日期 2008.06.13
申请人 SHARP CORP 发明人 KOYAMA HIDETSUGU
分类号 H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N5/3745;H04N101/00 主分类号 H01L27/146
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