| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element structured to suppress noise to an image signal, wherein fine processing can be achieved in a peripheral circuit formation area. SOLUTION: In a pixel formation region 4 constituted of a pixel comprising a photoelectric converting element 16 having a first conductivity type region 15 and a second conductivity type region 14 therebelow, and a transistor, the solid-state imaging element includes an element isolation region 11 comprising a first conductivity type impurity diffusion layer formed in a semiconductor base 10 and an element isolation layer 12 comprising insulating layers 17, 18 and 19 embedded in the semiconductor base 10 and formed to project to above the semiconductor base 10, wherein the element isolation region 11 and the element isolation layer 12 are formed to isolate the photoelectric converting element 16 and the transistor, and the first conductivity type region 15 of the photoelectric converting element 16 is formed to be in contact with the element isolation layer 12 of an adjacent element isolation part. COPYRIGHT: (C)2010,JPO&INPIT
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