发明名称 LITHOGRAPHY APPARATUS AND METHOD OF MANUFACTURING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a calibration method for calibrating a stage position of a lithography apparatus. <P>SOLUTION: This detection method detects a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate W or on a substrate table WT and preferably extends over a length at least 50 times wider than a width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table WT in the first direction and measuring along the first direction the property of the extended pattern. The property may be a result of a physical property of the extended pattern in a second direction at a right angle to the first direction. A next step allows a calibration of a substrate table position to be derived from the measured position of the extended pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009302531(A) 申请公布日期 2009.12.24
申请号 JP20090132700 申请日期 2009.06.02
申请人 ASML NETHERLANDS BV 发明人 AARTS IGOR MATHEUS PETRONELLA;GEERKE JOHAN HENDRIK;VAN DER PASCH ENGELBERTUS ANTONIUS FRANSISCUS;DE JONG FREDERIK E;VAN DE GRIFT MARC
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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