发明名称 PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus with a dielectric plate applied with surface processing. <P>SOLUTION: The plasma processing apparatus 100 is provided with a processing vessel 10 inside which plasma is excited in a required vacuum state, a microwave source 900 supplying microwave in the processing vessel for exciting plasma, and a dielectric plate 305 facing inside the processing vessel 10 for transmitting the microwave supplied from the microwave source 900 into the processing vessel. A face of the dielectric plate 305 at least shielding the vacuum from atmospheric air is coated with a metal film 305a (or a metal composite film). <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009301783(A) 申请公布日期 2009.12.24
申请号 JP20080152889 申请日期 2008.06.11
申请人 TOKYO ELECTRON LTD 发明人 HORIGUCHI TAKAHIRO
分类号 H05H1/46;H01L21/205;H01L21/3065 主分类号 H05H1/46
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