METHOD FOR FORMING TRIPLE GATE OF SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a gate of a semiconductor element capable of preventing degradation of an element characteristic and reliability caused by a plasm etching process; and a method for forming a gate of a semiconductor element capable of preventing a concentration phenomenon of an electric field in an upper corner part caused by a plasma etching process. SOLUTION: This method for forming a triple gate of a semiconductor element includes processes of: providing a support substrate, and a substrate comprising an embedded insulation layer and a semiconductor layer; forming a first trench and a second trench isolated from each other by etching the semiconductor layer in a vapor etching process; forming a gate insulating film on the upper surface of the substrate provided with the first trench and the second trench; and forming a gate conductive film on the gate insulating film. COPYRIGHT: (C)2010,JPO&INPIT