| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming porous layers by anode oxidation processing to a SOI layer of a semiconductor wafer in SOI structure. SOLUTION: The semiconductor wafer includes a supporting substrate, an embedded oxide film formed on the supporting substrate, the SOI layer formed on the embedded oxide film by setting lattice-type dividing lines, an N-well layer formed in a region surrounded by the dividing lines of the SOI layer, and form by selectively dispersing an N-type impurity, a porous layer formed at the central area of the N-well layer, an insulated covering film formed in a region except for the porous layer and a part of the N-well layer adjacent to the porous layer, a conductor plug electrically connected to the N-well layer through the insulated covering film, a conductor layer formed on the upper surface of the insulated covering film on the external circumferential edge part of the SOI layer and the dividing lines, a connecting wire for electrically connecting the conductor layer and the conductor plug, and an anti-corrosive covering film having an anti-corrosive property to the electrolyte for the anode oxidation processing formed in the region except for the porous layer and the conductor layer of the external circumferential edge. In this semiconductor wafer, during the anode oxidation processing, positive electricity is supplied to the conductor layer of the external circumferential edge in order to form a porous layer with the N-well layer as the anode. COPYRIGHT: (C)2010,JPO&INPIT |
