| 摘要 |
A multi-layer thick metallization structure for a microelectronic device includes a first barrier layer (111), a first metal layer (112) over the first barrier layer, a first passivation layer (113) over the first metal layer, a via structure (114) extending through the first passivation layer, a second barrier layer (115) over the first passivation layer and in the via structure, a second metal layer (116) over the second barrier layer, and a second passivation layer (117) over the second metal layer and the first passivation layer.
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