发明名称 ATOMIC LAYER DEPOSITED TITANIUM-DOPED INDIUM OXIDE FILMS
摘要 An apparatus and methods of forming the apparatus include a film of transparent conductive titanium-doped indium oxide for use in a variety of configurations and systems. The film of transparent conductive titanium-doped indium oxide may be structured as one or more monolayers. The film of transparent conductive titanium-doped indium oxide may be formed using atomic layer deposition.
申请公布号 US2009314345(A1) 申请公布日期 2009.12.24
申请号 US20090551023 申请日期 2009.08.31
申请人 AHN KIE Y;FORBES LEONARD 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L31/00;B32B17/06;G02B6/02;H01B5/14;H01J1/00;H01J1/62;H01L33/00 主分类号 H01L31/00
代理机构 代理人
主权项
地址