发明名称 |
SEMICONDUCTOR DEVICES INCLUDING SCHOTTKY DIODES HAVING DOPED REGIONS ARRANGED AS ISLANDS AND METHODS OF FABRICATING SAME |
摘要 |
A semiconductor device according to some embodiments includes a semiconductor layer having a first conductivity type and a surface in which an active region of the semiconductor device is defined. A plurality of spaced apart first doped regions are arranged within the active region. The plurality of first doped regions have a second conductivity type that is opposite the first conductivity type, have a first dopant concentration, and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of first doped regions are arranged as islands in the semiconductor layer. A second doped region in the semiconductor layer has the second conductivity type and has a second dopant concentration that is greater than the first dopant concentration.
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申请公布号 |
US2009315036(A1) |
申请公布日期 |
2009.12.24 |
申请号 |
US20090492670 |
申请日期 |
2009.06.26 |
申请人 |
ZHANG QINGCHUN;RYU SEI-HYUNG;AGARWAL ANANT |
发明人 |
ZHANG QINGCHUN;RYU SEI-HYUNG;AGARWAL ANANT |
分类号 |
H01L29/872;H01L21/329;H01L29/24 |
主分类号 |
H01L29/872 |
代理机构 |
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