| 摘要 |
An isolation layer of a semiconductor device, and a method of manufacturing the same, may include a trench formed in a semiconductor substrate, a first liner protective layer formed along an inner surface of the trench, a low-K material pattern formed over the first liner protective layer filling the trench, a recess formed over the low-K material pattern such that an upper sidewall of the first liner protective layer is exposed, and a second liner protective layer formed in the recess preventing the low-K material pattern from being exposed.
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