发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that accurately measures the temperature of a wafer in non-contact manner regardless of plane condition and emissivity of a wafer when an electromagnetic wave method is used to heat a wafer. SOLUTION: An electromagnetic wave heating type batch processing apparatus includes a cavity wherein a wafer 1 is housed, an electromagnetic wave source 55 for heating the wafer 1 by introducing an electromagnetic wave into the cavity, a temperature detection object 58 which is made of the same material as the wafer 1 and is arranged adjacent to the wafer 1 in the cavity, and a thermocouple 57 embedded at the center of the temperature detection object 58. The temperature detection object 58 is spherical and its diameter is one fourth or a half of wavelength of the electromagnetic wave λ. A dummy wafer 1A equivalent to the wafer 1 to be treated is set on a boat wherein a plurality of wafers 1 are stacked, and a radiation thermometer 59 is provided on the cavity. The temperature of the thermocouple 57 is corrected according to the indication of the radiation thermometer 59. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009302177(A) 申请公布日期 2009.12.24
申请号 JP20080152715 申请日期 2008.06.11
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YASHIMA SHINJI
分类号 H01L21/22;H01L21/205;H01L21/268;H01L21/31;H01L21/324 主分类号 H01L21/22
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