| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a practical laminated optoelectric converter which has a good optoelectric conversion efficiency and is suitable for mass production and a large area substrate. <P>SOLUTION: The method is provided for manufacturing a laminated optoelectric converter which includes first and second optoelectric conversion layers, each having an i-type amorphous layer composed of an amorphous silicon-based semiconductor and a third optoelectric conversion layer having an i-type microcrystal layer composed of a microcrystal silicon based semiconductor. In the laminated optoelectric converter, the first, second and third optoelectric conversion layers are formed by a plasma CVD method continuously in the same film deposition chamber using a gaseous raw material containing H<SB>2</SB>gas and SiH<SB>4</SB>gas. The first and the second optoelectric conversion layers are formed such that the i-type amorphous layer of the first optoelectric conversion layer and the i-type amorphous layer of the second layer are formed at a substrate temperature of <200°C, and the substrate temperature at which the i-type amorphous layer of the first optoelectric conversion layer is formed is lower than the substrate temperature at which the i-type amorphous layer of the second optoelectric conversion layer is formed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
