SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for manufacturing a semiconductor device has a step of forming insulating films (38, 40, 42) made of silicon compound-based insulating material on a substrate (10), a step of forming an opening (48) on the insulating films (38, 40, 42), a step of forming a barrier layer (50) made of crystalline SiC on the inner surface of the opening (48) by irradiating the inner surface with active energy rays in an atmosphere containing hydrocarbon-based gas, and a step of forming a wiring structure (52) made of copper within the opening (48) in which the barrier layer (50) is formed.