PROCESS FOR PRODUCING SILICON OXIDE FILMS FROM ORGANOAMINOSILANE PRECURSORS

摘要

PURPOSE: A method for depositing silicon oxide layer from organic amino acid silane precursor on a substrate is provided to ensure low etching rate and ensure high stability. CONSTITUTION: A silicon oxide film is formed through CVD(chemical vapor deposition) of silane oxide precursor. The silane oxide precursor is organic amino silane of chemical formula (C). A carbon source, hydrogen source, or carbon and hydrogen source is mixed in a deposition chamber to form silicon oxide doped with carbon and hydrogen. A nitrogen source is mixed in the deposition chamber to form carbon, nitrogen and silicon oxide film doped with nitrogen and hydrogen.