| 摘要 |
<p>[PROBLEMS] To provide a semiconductor device having a wiring which can improve reliability by suppressing migration while suppressing the increase of a resistance value. [MEANS FOR SOLVING PROBLEMS] The semiconductor device is provided with a plurality of interlayer insulating films laminated over a semiconductor substrate on which a plurality of semiconductor elements are formed; a trench, which is for a first wiring at the first level and is formed in an interlayer insulation film at the first level out of the interlayer insulation films; and a first damascene wiring, which is at the first level and includes a first barrier metal film formed by covering the lateral face and bottom face of the trench for the first wiring to demarcate the trench for a first main wiring and having a dispersion preventing function, and also includes a first main wiring layer filling the trench for the first main wiring, made of copper and having an added metal element having a migration suppression function added with different concentrations depending on the place.</p> |
