发明名称 |
NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR |
摘要 |
<p>Provided is a nano-wire field effect transistor which is characterized in that two columnar members made of a silicon crystal and constituting a nano-wire over a substrate are arranged vertically in parallel with the faces of the substrate. Also provided is a method of manufacturing the nano-wire field effect transistor, comprising a step of preparing an SOI substrate having a (100) plane azimuth, a step of working a silicon substrate forming an SOI layer, into a raised plate-shaped member having a rectangular section, a step of working the silicon crystal by a crystal anisotropy etching into the shape, in which two triangular columnar members are so vertically arranged at a spacing from each other as to face each other through the edge lines, and a step of hydrogen-annealing or thermally oxidizing the two triangular columnar members into a cylindrical shape to form the nano-wire. An integrated circuit including the nano-wire field effect transistor is also provided.</p> |
申请公布号 |
WO2009150999(A1) |
申请公布日期 |
2009.12.17 |
申请号 |
WO2009JP60310 |
申请日期 |
2009.06.05 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY;LIU YONGXUN;MATSUKAWA TAKASHI;ENDO KAZUHIKO;OUCHI SHINICHI;SAKAMOTO KUNIHIRO;MASAHARA MEISHOKU |
发明人 |
LIU YONGXUN;MATSUKAWA TAKASHI;ENDO KAZUHIKO;OUCHI SHINICHI;SAKAMOTO KUNIHIRO;MASAHARA MEISHOKU |
分类号 |
H01L29/786;H01L29/06 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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