| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the following problem: generation of a gate tunnel leak current may not be suppressed due to crystallization of a high dielectric constant insulating film when trying film thickening of portions located under the end parts of a gate electrode of a gate insulating film in a field effect transistor provided with the gate insulating film including the high dielectric constant insulating film. <P>SOLUTION: In a semiconductor device, the gate insulating film 2 is formed on the semiconductor device 1 and a gate electrode 3 is formed on the gate insulating film 2. In the gate insulating film 2, the film thickness of thick film portions 2a of the gate insulating film 2, which are located under both end parts of the gate electrode 3, is thicker than the film thickness of a center portion 2b of the gate insulating film 2, which is located under the center part of the gate electrode 3. <P>COPYRIGHT: (C)2010,JPO&INPIT |
