POWER SEMICONDUCTOR CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A power semiconductor circuit device is provided with: a base board (12) whereupon at least a power semiconductor element (10) is mounted; a resin (15) which molds the base board and the power semiconductor element in a state where a partial surface of the base board, including a base board surface opposite to the surface whereupon the power semiconductor element is mounted, is exposed; and a heat dissipating fin (16) bonded to the base board by a pressing force.  A trench (14) is formed on a bonding section of the heat dissipating fin on the base board (12), and the heat dissipating fin (16) is bonded to the trench (14) by swaging.  A method for manufacturing such power semiconductor circuit device is also provided.