DMOS-Transistorzelle mit einer Graben-Gateelektrode, sowie entsprechender DMOS-Transistor und Verfahren zu dessen Herstellung,申请号DE20016040350-传众专利搜索

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发明名称	DMOS-Transistorzelle mit einer Graben-Gateelektrode, sowie entsprechender DMOS-Transistor und Verfahren zu dessen Herstellung
摘要
申请公布号	DE60140350(D1)	申请公布日期	2009.12.17
申请号	DE20016040350	申请日期	2001.03.16
申请人	GENERAL SEMICONDUCTOR INC.	发明人	HSHIEH, FWU-IUAN;SO, KOON CHONG;TSUI, YAN MAN
分类号	H01L29/78;H01L21/336;H01L29/423;H01L29/49	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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