| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor composite device that reduces the size and the material cost. <P>SOLUTION: The semiconductor composite device includes a substrate, a sheet-like LED epitaxial film 103 which is a semiconductor thin film having only one semiconductor element inside, with thickness of 10 μm or less provided onto a substrate, sheet-like integrated circuit thin films 104 having an integrated circuit and a first terminal region, with thickness of 10 μm or less provided onto the substrate, individual wiring layers 105 of the thin films formed on regions from above the light emitting elements of a semiconductor element of the LED epitaxial film 103 to a first terminal region of the integrated circuit thin films 104 via the surface of the substrate, to electrically connect the semiconductor element of the LED epitaxial film 103 to the first terminal region of the integrated circuit thin films 104, and an interlayer dielectric provided at a part except a contact region of individual wiring layers under the individual wiring layers 105. <P>COPYRIGHT: (C)2010,JPO&INPIT |
