| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device that is operated by a high driving voltage. <P>SOLUTION: The light emitting device includes a substrate and two GaN-based light emitting elements disposed on the substrate, and the two GaN-based light emitting elements share one electrode with each other. In the light emitting device, the shared electrode may be apart from the substrate. In the light emitting device, the shared electrode may be disposed on a semiconductor layer common to the two GaN-based light emitting element. In the light emitting device, the two GaN-based light emitting elements may belong to mutually different light emitting arrays. <P>COPYRIGHT: (C)2010,JPO&INPIT |
