发明名称 |
Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for manufacturing Same |
摘要 |
The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate 11; an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15 that are composed of gallium nitride based compound semiconductors and formed on the substrate 11 in this order; a transparent positive electrode 16 that is formed on the p-type semiconductor layer 15; a positive electrode bonding pad 17 that is formed on the transparent positive electrode 16; a negative electrode bonding pad 18 that is formed on the n-type semiconductor layer 13; and an uneven surface that has random convex portions formed thereon and is provided on at least a portion of the surface 16a of the transparent positive electrode 16.
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申请公布号 |
US2009309119(A1) |
申请公布日期 |
2009.12.17 |
申请号 |
US20060096827 |
申请日期 |
2006.12.12 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
SHINOHARA HIRONAO;OSAWA HIROSHI |
分类号 |
H01L33/06;H01L33/22;H01L33/32;H01L33/42 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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