发明名称 OPTOELEKTRONISCHES HALBLEITERBAUELEMENT MIT STROMAUFWEITUNGSSCHICHT
摘要 <p>#CMT# #/CMT# Semi-conductor unit has semi-conductor base (10) at least partly laid on a current expansion layer (3). Layer contains metal (1) which forms a transparent conductive metal oxide (2). The concentration of metal decreases moving from the side of the expansion layer facing the semi-conductor base to the side of the layer turned away from the semi-conductor base. Method to make semi-conductor part involves firstly putting on metal layer on the base, secondly putting on a metal oxide on the metal layer and lastly heat treating the layers to produce the current expansion layer. #CMT#USE : #/CMT# The part is an opto-electronic semi-conductor. #CMT#ADVANTAGE : #/CMT# The semi-conductor part produces both electrically and mechanically stable contact. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows the opto-electronic part produced using inventive method. 1 : metal 2 : metal oxide 3 : current expansion layer 10 : semi-conductor base.</p>
申请公布号 DE502006005304(D1) 申请公布日期 2009.12.17
申请号 DE20065005304T 申请日期 2006.09.14
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 AHLSTEDT, MAGNUS;EISSLER, DIETER;WALTER, ROBERT;WIRTH, RALF
分类号 H01L31/0224;H01L31/103;H01L31/18;H01L33/00;H01L33/42;H01S5/042 主分类号 H01L31/0224
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