发明名称 |
OPTOELEKTRONISCHES HALBLEITERBAUELEMENT MIT STROMAUFWEITUNGSSCHICHT |
摘要 |
<p>#CMT# #/CMT# Semi-conductor unit has semi-conductor base (10) at least partly laid on a current expansion layer (3). Layer contains metal (1) which forms a transparent conductive metal oxide (2). The concentration of metal decreases moving from the side of the expansion layer facing the semi-conductor base to the side of the layer turned away from the semi-conductor base. Method to make semi-conductor part involves firstly putting on metal layer on the base, secondly putting on a metal oxide on the metal layer and lastly heat treating the layers to produce the current expansion layer. #CMT#USE : #/CMT# The part is an opto-electronic semi-conductor. #CMT#ADVANTAGE : #/CMT# The semi-conductor part produces both electrically and mechanically stable contact. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows the opto-electronic part produced using inventive method. 1 : metal 2 : metal oxide 3 : current expansion layer 10 : semi-conductor base.</p> |
申请公布号 |
DE502006005304(D1) |
申请公布日期 |
2009.12.17 |
申请号 |
DE20065005304T |
申请日期 |
2006.09.14 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
AHLSTEDT, MAGNUS;EISSLER, DIETER;WALTER, ROBERT;WIRTH, RALF |
分类号 |
H01L31/0224;H01L31/103;H01L31/18;H01L33/00;H01L33/42;H01S5/042 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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