| 摘要 |
<p>A plasma processing apparatus comprises a chamber (1); a lower electrode (3) that is located in the chamber (1) and that supports a wafer (W); an upper electrode (5) that is also located in the chamber (1) and opposed to the lower electrode (3); and a high frequency power supplying mechanism (20) that modulates a first high frequency, which is to be used for plasma generation, with a second high frequency that is to be used for ion acceleration, then amplifies the composite wave as formed by that modulation and then applies a high frequency power as obtained by that amplification to the lower electrode (3). The high frequency power supplying mechanism (20) comprises a first oscillator (31) for oscillating the first high frequency; a second oscillator (32) for oscillating the second high frequency; a modulator (33) for modulating the first high frequency with the second high frequency; modulation factor adjusting parts (34, 35) each for adjusting the modulation factor; a high frequency power supply (22) for amplifying the obtained composite wave to generate the predetermined high frequency power; and a matcher (23).</p> |
