发明名称 |
Phase change material for high density non-volatile memory |
摘要 |
The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
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申请公布号 |
US7632456(B2) |
申请公布日期 |
2009.12.15 |
申请号 |
US20060411558 |
申请日期 |
2006.04.25 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
CHEONG BYUNG-KI;JEONG JEUNG-HYUN;KANG DAE-HWAN;JUNG HAN JU;LEE TAEK SUNG;KIM IN HO;KIM WON MOK;LEE KYEONG SEOK |
分类号 |
C22C12/00;B41M5/26;G11B7/24 |
主分类号 |
C22C12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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