发明名称 Phase change material for high density non-volatile memory
摘要 The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
申请公布号 US7632456(B2) 申请公布日期 2009.12.15
申请号 US20060411558 申请日期 2006.04.25
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 CHEONG BYUNG-KI;JEONG JEUNG-HYUN;KANG DAE-HWAN;JUNG HAN JU;LEE TAEK SUNG;KIM IN HO;KIM WON MOK;LEE KYEONG SEOK
分类号 C22C12/00;B41M5/26;G11B7/24 主分类号 C22C12/00
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