| 摘要 |
PURPOSE: An RFID apparatus including a nonvolatile ferroelectric memory is provided to minimize power consumption of a bit line by deactivating a matching control signal at a low level in an operation section of a sense amplifier. CONSTITUTION: A cell array(431) comprises a pair of bit lines, and a plurality of unit cells formed in an intersection area between the bit lines/plural word lines and plural plate lines. Each of the unit cells comprises a switching element and a ferroelectric capacitor. The ferroelectric capacitor is connected between the plate line and the switching element. The switching element is connected between the bit line and the ferroelectric capacitor. The sense amplifier(432) is controlled by a sense amp enable signal between the pair of bit lines. A bit line equalization unit(433) comprises an NMOS transistor. A matching capacitor unit(434) comprises a matching capacitor connected between the pair of bit lines and a power voltage terminal. |
