| 摘要 |
<p>PURPOSE: A non volatile memory device and a method for manufacturing the same are provided to add a junction layer to the drain of a transistor to form a conductive line using brake down of double junction, thereby reducing an area that a unit element of a non volatile memory occupies. CONSTITUTION: A gate(105) is formed in an active area of a semiconductor substrate. The first conductive source junction layer and the first conductive drain junction layer are formed in the side of a gate. The second conductive double junction layer(121) is formed in the drain junction layer. An interlayer insulating film is formed on a gate, a source junction layer, a drain junction layer and a double junction layer. A plurality of contact plugs are formed in the interlayer insulating film in order to be respectively connected to the source junction layer, the drain junction layer and the double junction layer. A plurality of metal wirings(129,131,133) are formed on the contact plug.</p> |
