PURPOSE: A memory test device and a memory test method are provided to simplify a memory test algorithm by reducing a task which is performed for error detection and easily detect an error of a memory having a big capacity. CONSTITUTION: A memory test device(100) comprises an operation device. The operation device processes data based on a predetermined command. The memory test device comprises an extended register(120) and a general register(110) having N bytes. The general register has a bit number bigger than a bit number of a general command in order to perform data operation according to the general command. A memory(200) is divided into a plurality of addresses(210). Predetermined data patterns are written for a memory test in the memory. A controller(130) decides identity of write and read test patterns by using an extension command. The controller determines an address of a memory having an error by using the general command.
申请公布号
KR20090127689(A)
申请公布日期
2009.12.14
申请号
KR20080053786
申请日期
2008.06.09
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, BUM KEUN;KIM, KYUNG YOUNG;OH, JUNG HWAN;LEE, BEOM SEOK