| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high performance photodetector comprising semiconductor nanoparticles embedded Si insulating film, and to provide a method for manufacturing the semiconductor nanoparticles embedded Si insulating film with stability and reliability, which is used for the photodetector. <P>SOLUTION: The photodetector 100 uses the semiconductor nanoparticles embedded insulating film, and is provided with: a bottom electrode 102; the semiconductor nanoparticles embedded Si insulating film 104 which overlaps the bottom electrode 102, and includes an element selected from a group consisting of N and C; and an upper electrode 106 which overlaps the semiconductor nanoparticles embedded Si insulating film 104. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
