| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a sputtering target for use in forming a chalcopyrite type semiconductor film which is used when a light absorption layer of a solar cell is formed. <P>SOLUTION: This production method comprises: preparing a powder of a Cu-Se binary copper alloy, a powder of a Cu-In binary copper alloy, a powder of a Cu-Ga binary copper alloy, and a powder of a Cu-In-Ga ternary copper alloy as row material powders; preparing a mixture powder by blending and mixing the powder of the Cu-Se binary copper alloy with the powder of the Cu-In binary copper alloy, the powder of Cu-Ga binary copper alloy, or the powder of Cu-In-Ga ternary copper alloy so as to have a component composition expressed by Cu<SB>a</SB>In<SB>b</SB>Ga<SB>c</SB>Se<SB>d</SB>(wherein the unit is atom%; 25≤a≤65; 0≤b≤50; 0≤c≤30; 30≤d≤50; and a+b+c+d=100); preparing a hot-pressed body by hot-pressing the mixture powder; and cutting the surface of the hot-pressed body. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
