| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To shorten time which is required to read out data from a nonvolatile memory. <P>SOLUTION: A nonvolatile semiconductor memory device 10 includes: nonvolatile memory cells MC; a word line connected to the memory cells MC; a decoder 13 which receives an address and generates a decode signal for selecting the word line based on the address; and a level shifter 12 which, when the word line is selected, charges the word line to a charge voltage higher than a power supply voltage. The level shifter 12 includes: a transistor NM1 which has a drain which receives the decode signal and a source connected to the word line; and a setting circuit 12A which applies the power supply voltage to the gate of the transistor NM1 during an initial period of charging, and applies a ground voltage to the gate of the transistor NM1 after the word line is charged to a threshold voltage lower than the power supply voltage. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
