| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent an effect of level difference due to an opening for extracting an electrode to be formed in a manufacturing step to manufacture an optical component with high accuracy, etc. in a backside illuminated solid-state imaging device. Ž<P>SOLUTION: In the backside illuminated solid-state imaging device which forms a signal circuit 22 on one surface of a semiconductor substrate on which a photodiode 20 is formed via an interlayer film 30, and takes in light to the photodiode 20 from the other surface side, the backside illuminated solid-state imaging device has the opening 23 for extracting the electrode for obtaining conduction with the signal circuit 22 on the other surface side of the semiconductor substrate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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