发明名称 SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD
摘要 A substrate processing method uses a processing fluid to selectively process only a region of a portion of a processing surface of a substrate to be processed, by causing a discharge aperture and a suction aperture of a nozzle having the discharge aperture and the suction aperture for the processing fluid and provided movable relative to the substrate to be processed to face the processing surface of the substrate and suctioning the processing fluid supplied onto the processing surface through the suction aperture while supplying the processing fluid from the discharge aperture onto the processing surface.
申请公布号 US2009305153(A1) 申请公布日期 2009.12.10
申请号 US20090479202 申请日期 2009.06.05
申请人 SAKURAI HIDEAKI;OPPATA YUKIO;ITOH MASAMITSU 发明人 SAKURAI HIDEAKI;OPPATA YUKIO;ITOH MASAMITSU
分类号 G03F7/20;B08B3/04;B08B7/04;G03F1/44;G03F1/82;H01L21/027;H01L21/304 主分类号 G03F7/20
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