发明名称 NOISE ISOLATION BETWEEN CIRCUIT BLOCKS IN AN INTEGRATED CIRCUIT CHIP
摘要 An integrated circuit includes a p-well block region having a low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region and a grounded, highly doped region for providing additional noise isolation.
申请公布号 US2009302440(A1) 申请公布日期 2009.12.10
申请号 US20090512616 申请日期 2009.07.30
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 SECAREANU RADU M.;BANERJEE SUMAN K.;HARTIN OLIN L.
分类号 H01L23/62;H01L23/552 主分类号 H01L23/62
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