发明名称 |
NOISE ISOLATION BETWEEN CIRCUIT BLOCKS IN AN INTEGRATED CIRCUIT CHIP |
摘要 |
An integrated circuit includes a p-well block region having a low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region and a grounded, highly doped region for providing additional noise isolation.
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申请公布号 |
US2009302440(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20090512616 |
申请日期 |
2009.07.30 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SECAREANU RADU M.;BANERJEE SUMAN K.;HARTIN OLIN L. |
分类号 |
H01L23/62;H01L23/552 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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