发明名称 Electrically testing a sample
摘要 A method of testing a sample e.g. a MOSFET (1) comprises using the tip of a probe (6) of a scanning tunnelling microscope to form a gated inversion region (23) in the sample, and analysing the conductive characteristics of the sample with the gated region formed therein, e.g. at 0.01 DEG K. <IMAGE>
申请公布号 GB2267761(A) 申请公布日期 1993.12.15
申请号 GB19920011583 申请日期 1992.06.02
申请人 * HITACHI EUROPE LIMITED 发明人 JULIAN DARRYN * WHITE
分类号 G01R1/067;G01R31/265;G01R31/28 主分类号 G01R1/067
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