| 摘要 |
<P>PROBLEM TO BE SOLVED: To use a write current exceeding a threshold current. Ž<P>SOLUTION: A semiconductor memory comprises: first and second bit lines BL1, BL2; a first word line WL1 extended in a direction crossing the first and second bit lines BL1, BL2; a first MTJ element that has first and second terminals while the first terminal is connected to the first bit line BL1; a first selection transistor Tr1<SB>1</SB>that has a first gate electrode connected to the first word line WL1 and a first current path with one end connected to the second bit line BL2 and the other end connected to the second terminal of the first MTJ element MTJ1; and first to third auxiliary transistors Tr2<SB>1</SB>, Tr3<SB>1</SB>, Tr4<SB>1</SB>each having the gate electrode and a current path with one end connected to the second terminal of the first MTJ element MTJ1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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