| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem that a faulty point analysis method of a semiconductor element is inaccurate and impossible to be effectively utilized although the faulty point analysis method of the semiconductor element is a heat generation analysis method, a hot electron luminescence analysis method, a liquid crystal method and an IR-OBIRCH method, and the liquid method is known as a method for identifying a faulty point under a metal layer by heat generation. SOLUTION: While a voltage having a waveform in a pulsating flow state is applied, the semiconductor element is operated, and a heat generation analyzer detects heat generated by a current flowing in the semiconductor element. The faulty point is identified by an infrared image of the semiconductor element after the heat is generated. Since the voltage has the waveform in the pulsating flow state, the heat can be intermittently generated, and a specific region in which the heat is generated can be identified as a pinpoint. COPYRIGHT: (C)2010,JPO&INPIT
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