发明名称 Photodiode array and production method thereof, and radiation detector
摘要 A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposite surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A resin film 6 for transmitting the light L to be detected is provided so as to cover at least regions corresponding to regions where the photodiodes 4 are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate 3.
申请公布号 US2009302410(A1) 申请公布日期 2009.12.10
申请号 US20090461465 申请日期 2009.08.12
申请人 HAMAMATSU PHOTONICS K.K. 发明人 SHIBAYAMA KATSUMI
分类号 G01T1/20;H01L31/02;H01L27/14;H01L27/144;H01L27/146;H01L31/0216;H01L31/09;H01L31/115;H01L31/18 主分类号 G01T1/20
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