| 摘要 |
Provided are a method for manufacturing a III nitride semiconductor light emitting element having excellent productivity and light emitting characteristics, the III nitride semiconductor light emitting element, and a lamp. In the method, a buffer layer (12) composed of a III nitride compound is laminated on a substrate (11), and an n-type semiconductor layer (14) provided with a base layer (14a), a light emitting layer (15), and a p-type semiconductor layer (16) are sequentially laminated on the buffer layer (12). The method is provided with a preprocessing step of performing plasma processing to the substrate (11), a buffer layer forming step of forming the buffer layer (12) having a composition of AlXGa1-XN (0=X<1) on the substrate (11) after the preprocessing step by having at least a Ga raw metal material and a gas containing a V element react to each other by activating the material and the gas by plasma, and a base layer forming step of forming the base layer (14a) on the buffer layer (12). |
