发明名称 |
ANNEALING OF SEMI-INSULATING CDZNTE CRYSTALS |
摘要 |
In a method of annealing a Cd1-xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.
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申请公布号 |
CA2726986(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
CA20092726986 |
申请日期 |
2009.06.02 |
申请人 |
II-VI INCORPORATED |
发明人 |
SZELES, CSABA;PROKESCH, MICHAEL;CHAKRABARTI, UTPAL |
分类号 |
C30B15/04;C30B11/00 |
主分类号 |
C30B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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